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APT64GA90B APT64GA90S
900V High Speed PT IGBT
TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT64GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
900 117 64 193 30 500 193A @ 900V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 38A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 250 1000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
6 - 2009 052-6325 Rev C
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com
Min
-
Typ
5.9
Max
0.25 -
Unit
C/W g in*lbf
10
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 38A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +125C 18 26 131 104 1192 1088 17 27 181 171 1857 2311 193
APT64GA90B_S
Typ
3525 318 53 162 26 64 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Min
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6325 Rev C
6 - 2009
Typical Performance Curves
100
V
GE
APT64GA90B_S
300 250 10V 200 150 100 50 0 9V 8V 7V 6V 15V 13V 11V
= 15V
TJ= 55C TJ= 125C IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
80 TJ= 25C 60 TJ= 150C 40
20
0
0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0
16 14 12 10 8 6 4 2 0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 38A C T = 25C
J
VCE = 180V VCE = 450V VCE = 720V
TJ= -55C TJ= 125C TJ= 25C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
0
20
40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate charge
5
3
IC = 76A IC = 38A
4
3
IC = 76A IC = 38A
2 IC = 13A 1
2
IC = 19A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 6 - 2009 25 50 052-6325 Rev C
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95
0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
24 td(ON), TURN-ON DELAY TIME (ns) 22 20 18 16 14 12 10 200 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H
APT64GA90B_S
160
VGE =15V,TJ=125C
120
VGE =15V,TJ=25C
80
40
VCE = 600V RG = 4.7 L = 100H
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 RG = 4.7, L = 100H, VCE = 600V 70 60
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
0
200
tr, RISE TIME (ns)
tr, FALL TIME (ns)
50 40 30 20 10 0 0 10 20
TJ = 25 or 125C,VGE = 15V
150
TJ = 125C, VGE = 15V
100
TJ = 25C, VGE = 15V
50
30
40
50
60
70
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000 0
TJ = 25C TJ = 125C
V = 600V CE V = +15V GE R =4.7
G
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80
TJ = 25C TJ = 125C
V = 600V CE V = +15V GE R = 4.7
G
0
RG = 4.7, L = 100H, VCE = 600V
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0 0
Eon2,38A Eoff,38A Eon2,19A Eoff,19A Eon2,76A Eoff,76A
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE R = 4.7
G
V = 600V CE = +15V V GE T = 125C
J
5000 4000 3000
Eon2,76A Eoff,76A
6 - 2009
Eon2,38A
2000
Eoff,38A
052-6325 Rev C
1000 0
Eon2,19A Eoff,19A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 1000
APT64GA90B_S
1,000
10
100
Coes
1
Cres 0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.10 0.15 0.10 0.05 0 D = 0.9
0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1 1 10-2 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
052-6325 Rev C
6 - 2009
APT64GA90B_S
10% Gate Voltage td(on) TJ = 125C 90% tr
V CC IC V CE
APT30DQ100
Collector Current 5% Collector Voltage
5%
10%
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C
Gate Voltage Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
6 - 2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Heat Sink (Collector)
Gate Collector
and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
052-6325 Rev C
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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